Optical characterization of GaAs/AlAs short period superlattices
- Authors
- Woo, DH; Han, IK; Choi, WJ; Lee, S; Kim, HJ; Lee, JI; Kim, SH; Kang, KN; Choi, SG; Kim, YD; Yoo, SD; Aspnes, DE; Rhee, SJ; Woo, JC
- Issue Date
- 1998-08
- Publisher
- ELSEVIER SCIENCE BV
- Citation
- MICROELECTRONIC ENGINEERING, v.43-4, pp.265 - 270
- Abstract
- We present optical studies of a series of GaAs/AlAs short period superlattices grown by molecular beam epitaxy. The structural properties were examined by X-ray diffraction measurements. The quantum confinement of the electronic and the vibronic states were observed in the low temperature photoluminescence and Raman scattering experiments, respectively. Spectroscopic ellipsometric (SE) measurements were also performed. We found a new structure at the lower E-2 peak, which is the best resolution of the E-2 structure in these SLs so far obtained by SE. (C) 1998 Elsevier Science B.V. All rights reserved.
- Keywords
- GAAS-ALAS; TRANSITIONS; ALXGA1-XAS; GAAS-ALAS; TRANSITIONS; ALXGA1-XAS; MBE
- ISSN
- 0167-9317
- URI
- https://pubs.kist.re.kr/handle/201004/142949
- DOI
- 10.1016/S0167-9317(98)00173-7
- Appears in Collections:
- KIST Article > Others
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