Effects of application of axial fields on asymmetric magnetization reversal
- Authors
- Shin, KH; Graham, CD; Zhou, PY
- Issue Date
- 1998-01
- Publisher
- ELSEVIER SCIENCE BV
- Citation
- JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.177, pp.225 - 226
- Abstract
- We observed that asymmetric magnetization reversal (AMR) can be destroyed partially or totally by magnetizing the sample in a sufficiently high magnetic field. The single AMR is not altered for applied fields below +/- 3 Oe. For applied fields between +/- 3 and +/- 250 Oe, the single AMR is increasingly altered by higher fields, but can be restored close to the original state. For fields greater than +/- 300 Oe, the single AMR is destroyed and cannot be restored to its original state by applying a field at room temperature. The experimental results can be explained by means of a metastable domain structure characterized by the induced anisotropy and the exchange anisotropy. (C) 1998 Elsevier Science B.V. All rights reserved.
- Keywords
- amorphous systems - soft magnetic; anisotropy - induced; domain wall pinning; magnetization - asymmetrical
- ISSN
- 0304-8853
- URI
- https://pubs.kist.re.kr/handle/201004/143432
- DOI
- 10.1016/S0304-8853(97)00915-3
- Appears in Collections:
- KIST Article > Others
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