Interface reactions between manganese zinc ferrite single crystals and SiO2-PbO-ZnO-MnO systems

Authors
Je, HJKim, DKByeon, SCHong, KSSon, YBJang, SDKim, CH
Issue Date
1996-06
Publisher
JAPAN J APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.35, no.6A, pp.3553 - 3558
Abstract
The interface reactions between Mn-Zn ferrite single crystals and SiO2-PbO-ZnO-MnO systems were investigated using a scanning electron microscope, an electron probe microanalyzer, and an X-ray diffractometer. No intermediate phase was formed at the interface after reaction at 1000 degrees C, but the concentration profiles of Zn and Mn ion at the ferrite adjacent to the interface were markedly affected by their atomic ratio in the glass. When 6 mol% MnO and 4 mol% ZnO, the ratio of which was similar to that in the ferrite, were added to the SiO2-PbO binary system, the concentration of Zn ion was increased at the ferrite adjacent to the interface. It was confirmed that the diffusion rate of Mn ion in the glass melt was higher than that of Zn ion. Therefore, the enrichment of Zn ions was considered to be caused by the higher dissolution rate of Mn ion into the glass from the ferrite than that of Zn ion. It was found that when 7 mol% MnO and 3 mol% ZnO, the ratio of which was higher than that in the ferrite, were contained in the glass, the concentrations of Zn and Mn ions hardly changed at the ferrite adjacent to the interface.
Keywords
GLASS; GLASS; ferrite; glass; interface reaction; concentration profile; dissolution; diffusion; second phase; atomic ratio
ISSN
0021-4922
URI
https://pubs.kist.re.kr/handle/201004/144420
DOI
10.1143/JJAP.35.3553
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KIST Article > Others
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