화학선속 증착법 (Chemical Beam Epitaxy) 으로 성장한 InGaAsP 시료의 광루미네슨스 특성 .

Authors
강광남우덕하한일기최원준김회종김선호이정일
Issue Date
1995-01
Citation
Bull. Korean phys. soc., v.v. 13, no.no. 2, pp.499 - ?
Keywords
InGaAsP
URI
https://pubs.kist.re.kr/handle/201004/145250
Appears in Collections:
KIST Article > Others
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