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The characteristics of nitrogen implanted tungsten film as a new diffusion barrier for metal organic chemical vapor deposited Cu metallization.

Authors

김용태; 민석기; C. S. Kwon; I. H. Choi

Issue Date

1995-01

Citation

Japanese journal of applied physics, v.v. 34, pp.78 - 81

Keywords

nitrogen implantation

URI

https://pubs.kist.re.kr/handle/201004/145299

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KIST Article > Others

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