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dc.contributor.author서상희-
dc.contributor.author임성욱-
dc.contributor.author송종형-
dc.contributor.author박만장-
dc.contributor.author김홍국-
dc.contributor.author김재묵-
dc.date.accessioned2024-01-21T22:02:00Z-
dc.date.available2024-01-21T22:02:00Z-
dc.date.created2022-01-10-
dc.date.issued1994-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/145762-
dc.titleSurface morphology and growth rate of Hgl-xCdxTe grown by MOVPE on (100)GaAs.-
dc.title.alternativeMOVPE 방법으로 (100)GaAs 위에 성장된 Hgl-xCdxTe 박막 단결정의 표면형상과 성장속도 =-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation응용물리, v.v. 7, no.no. 5, pp.372 - 378-
dc.citation.title응용물리-
dc.citation.volumev. 7-
dc.citation.numberno. 5-
dc.citation.startPage372-
dc.citation.endPage378-
dc.subject.keywordAuthorMOVPE-
dc.subject.keywordAuthor(100)GaAs-
dc.subject.keywordAuthorHgCdTe-
dc.subject.keywordAuthor표면형상-
dc.subject.keywordAuthor성장속도-
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