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dc.contributor.author강광남-
dc.contributor.author이정일-
dc.contributor.author한일기-
dc.contributor.authorY. J. Lee-
dc.contributor.authorW. J. Choi-
dc.contributor.authorG. H. Park-
dc.date.accessioned2024-01-21T22:47:26Z-
dc.date.available2024-01-21T22:47:26Z-
dc.date.created2022-01-10-
dc.date.issued1993-01-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/146292-
dc.titleSurface passivated InP metal-semiconductor-metal schottky diode.-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitationJournal of Kor. phys. soc., v.v. 26, pp.S159 - S162-
dc.citation.titleJournal of Kor. phys. soc.-
dc.citation.volumev. 26-
dc.citation.startPageS159-
dc.citation.endPageS162-
dc.subject.keywordAuthorInP metal-semiconductor-metal schottky diode-
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