Growth of g-Al2O3 thin films on Si by low-pressure metalorganic chemical vapor deposition

Authors
염상섭윤영수W. N. KangJ. I. LeeD. J. ChoiT. W. KimK. Y. SeoP. H. HurC. Y. Kim
Issue Date
1992-01
Citation
Thin solid films, v.213, pp.72 - 75
Keywords
thin films; Al2O3; MOCVD
URI
https://pubs.kist.re.kr/handle/201004/146632
Appears in Collections:
KIST Article > Others
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE