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k-nonconserving transition in heavily doped LPE grown n-type In0.5Ga0.5P

Authors: Jeong, B.S.; Choi, J.S.; Chang, S.K.; Chung, C.H.; Park, H.L.; Lee, H.J.; Lee, J.I.; Lim, H.; Kim, S.Y.

Issue Date: 1992-01

Citation: Solid State Communications, v.82, no.1, pp.7 - 12

Abstract: Heavily unintentionally doped n-type InGaP was grown by LPE technique. Temperature and excitation power dependence of PL measurements were carried out to investigate the first observed 2.107 eV PL peak in In0.5Ga0.5P and we confirmed the first k-nonconserving optical transition in In0.5Ga0.5P. Also the unintentionally doped major impurity was found to be sulfur through XRF technique. ？ 1992.

Keywords: Semiconducting Indium Compounds--Doping; Semiconductor Diodes, Light Emitting; Heavy doping; LPE techniques; Semiconducting Indium Compounds; Semiconducting Indium Compounds--Doping; Semiconductor Diodes, Light Emitting; Heavy doping; LPE techniques; Semiconducting Indium Compounds; LPE; InGaP; heavily doping

ISSN: 0038-1098

URI: https://pubs.kist.re.kr/handle/201004/146687

DOI: 10.1016/0038-1098(92)90396-Q

Appears in Collections:: KIST Article > Others

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