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dc.contributor.author김용-
dc.contributor.author김무성-
dc.contributor.author김현수-
dc.contributor.author박승철-
dc.contributor.author한철원-
dc.contributor.author민석기-
dc.date.accessioned2024-01-22T01:11:59Z-
dc.date.available2024-01-22T01:11:59Z-
dc.date.created2022-01-10-
dc.date.issued1988-04-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/147583-
dc.titleX- 선 회절방법에 의한 Al// χ Ga//1//-// χ As,In// χ Ga//1//-// χ As 의 AlAs,InAs 조성결정 .-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation응용물리, v.v. 1, pp.10 - ?-
dc.citation.title응용물리-
dc.citation.volumev. 1-
dc.citation.startPage10-
dc.citation.endPage?-
dc.subject.keywordAuthorX-ray diffraction-
dc.subject.keywordAuthorAlGaAs-
dc.subject.keywordAuthorInGaAs-
dc.subject.keywordAuthorVPE-
dc.subject.keywordAuthorMOCVD-
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