Real-Time Ultraviolet Monitoring System with Low-Temperature Solution-Processed High-Transparent p-n Junction Photodiode with a Fast Responsive and High Rectification Ratio

Authors
Ha, Hyoun JiKang, Seong JaeJeong, Jun HyungMa, Jin HyunPark, Min HoKim, WonsikHa, AelimKim, SeunghwanPark, SoohyungKang, Seong Jun
Issue Date
2024-07
Publisher
American Chemical Society
Citation
ACS Applied Materials & Interfaces, v.16, no.30, pp.40139 - 40148
Abstract
We introduce an enhanced performance organic-inorganic hybrid p-n junction photodiode, utilizing poly[bis(4-phenyl) (2,4,6-trimethylphenyl)amine] (PTAA) and ZnO, fabricated through a solution-based process at a low temperature under 100 degrees C. Improved interfacial electronic structure, characterized by shallower Gaussian standard deviation of the density-of-state distribution and a larger interface dipole, has resulted in a remarkable fold increase of similar to 10(2) in signal-to-noise ratio for the device. This photodiode exhibits a high specific detectivity (2.32 x 10(11) Jones, cm x root Hz x W-1) and exceptional rectification ratio (5.47 x 10(4) at +/- 1 V). The primary light response, concentrated in the optimal thickness of the PTAA layer, contributes to response over the entire UVA region and rapid response speed, with rise and fall times of 0.24 and 0.64 ms, respectively. Furthermore, this work demonstrates immense potential of our device for health monitoring applications by enabling real-time and continuous measurements of UV intensity.
Keywords
SKIN-CANCER; PHOTODETECTORS; UVA; p-n junction; ZnO; PTAA; photodiode; ultraviolet; low temperature; energy levelalignment; transparent photodetector
ISSN
1944-8244
URI
https://pubs.kist.re.kr/handle/201004/150346
DOI
10.1021/acsami.4c05494
Appears in Collections:
KIST Article > 2024
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