Intense Pulsed Light Annealing for High-k Capacitor Integration in 1T-1C DRAM With a-IGZO Cell Transistors

Authors
Kim, HeetaePark, SeohakJeong, JohakJeon, JihoonLee, HoseokSung, ChihunNa, JehoKim, Min JuKim, Seong KeunChoi, Sung-YoolHeo, KeunCho, Sung HaengCho, Byung Jin
Issue Date
2024-12
Publisher
Institute of Electrical and Electronics Engineers
Citation
IEEE Electron Device Letters, v.45, no.12, pp.2431 - 2434
Abstract
In this study, we report the integration of an a-IGZO cell transistor and a high-k ZrO2 cell capacitor using Intense Pulsed Light (IPL) annealing for 1T-1C DRAM application. With IPL annealing, the ZrO2 capacitor can successfully achieve a high k-value of 33, without any detrimental effect to the electrical performance of the IGZO transistor which is vulnerable to high temperature process. The a-IGZO transistor could maintain an ultra-low leakage current of 1.3 x 10(-16) A/mu m, even after the high-k dielectric crystallization process.
Keywords
CRYSTALLIZATION; TEMPERATURE; Intense pulsed light; 1T-1C DRAM; oxide semiconductor; high-k dielectric
ISSN
0741-3106
URI
https://pubs.kist.re.kr/handle/201004/151921
DOI
10.1109/LED.2024.3485609
Appears in Collections:
KIST Article > 2024
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