Intense Pulsed Light Annealing for High-k Capacitor Integration in 1T-1C DRAM With a-IGZO Cell Transistors
- Authors
- Kim, Heetae; Park, Seohak; Jeong, Johak; Jeon, Jihoon; Lee, Hoseok; Sung, Chihun; Na, Jeho; Kim, Min Ju; Kim, Seong Keun; Choi, Sung-Yool; Heo, Keun; Cho, Sung Haeng; Cho, Byung Jin
- Issue Date
- 2024-12
- Publisher
- Institute of Electrical and Electronics Engineers
- Citation
- IEEE Electron Device Letters, v.45, no.12, pp.2431 - 2434
- Abstract
- In this study, we report the integration of an a-IGZO cell transistor and a high-k ZrO2 cell capacitor using Intense Pulsed Light (IPL) annealing for 1T-1C DRAM application. With IPL annealing, the ZrO2 capacitor can successfully achieve a high k-value of 33, without any detrimental effect to the electrical performance of the IGZO transistor which is vulnerable to high temperature process. The a-IGZO transistor could maintain an ultra-low leakage current of 1.3 x 10(-16) A/mu m, even after the high-k dielectric crystallization process.
- Keywords
- CRYSTALLIZATION; TEMPERATURE; Intense pulsed light; 1T-1C DRAM; oxide semiconductor; high-k dielectric
- ISSN
- 0741-3106
- URI
- https://pubs.kist.re.kr/handle/201004/151921
- DOI
- 10.1109/LED.2024.3485609
- Appears in Collections:
- KIST Article > 2024
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