Analysis of multi-layer VOx thin film for uncooled IR detectors

Abstract

In this paper, we analyzed multi VOx thin lms to use as IR absorbing layer of uncooled IR devices. We used the new structure to fabricate VOx thin lm that has improved IR absorbing characteristics. We deposited multi VOx thin lms on SiNx by reactive RF magnetron sputtering method with di erent conditions. We changed the thickness of V and V2O5 thin lms and O2/Ar gas ratio. With this method, we could fabricate multi VOx thin lms that have improved IR absorbing characteristics. As the result of this, we obtained that TCR(Temperature Coe cient of Resistance) value of multi layer VOx thin lms was about -2.0 %/K and resistivity was 1 cm.