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Characteristics of GaN films grown on the stress-imposed Si(lll)

Title
Characteristics of GaN films grown on the stress-imposed Si(lll)
Authors
고의관; 박용주; 김은규; 박찬수; 이석헌; 이정희; 조성호
Keywords
GaN; Si(lll) substrate; Implantation; buffer-layer; stress
Issue Date
2000-09
Publisher
Materials science & engineering B, Solid-state materials for advanced technology
Citation
VOL 77, NO 3, 268-273
URI
https://pubs.kist.re.kr/handle/201004/17009
ISSN
0921-5107
Appears in Collections:
KIST Publication > Article
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