DSpace at KIST: Control of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering by changing NH3 flow rate during the growth of SiNx capping layer

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Control of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering by changing NH3 flow rate during the growth of SiNx capping layer

Title: Control of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering by changing NH3 flow rate during the growth of SiNx capping layer

Authors: 최원준; 이희택; 우덕하; 이석; 김선호; 강광남; 조재원

Keywords: PECVD; combination of dielectric-semiconductor capping; quantum well intermixing; control by gas ratio

Issue Date: 1999-11

Publisher: Marerials Research Society Symposium Proceedings

Citation: VOL 607, 515-518

URI: https://pubs.kist.re.kr/handle/201004/18260

Appears in Collections:: KIST Publication > Conference Paper

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