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Absorption properties of the epitaxial Alx-Ga1-xN grown by plasma induced molecular beam epitaxy

Title: Absorption properties of the epitaxial Alx-Ga1-xN grown by plasma induced molecular beam epitaxy

Authors: 김제원; 손창식; 심선일; 최인훈; 박영균; 김용태; O. Ambacher; M. Stutzmann

Keywords: Absorption Properties; AlGaN; Gallium Nitride; molecular beam epitaxy

Issue Date: 1998-10

Publisher: 한국물리학회 회보; Bulletin of the Korean Physical Society

Citation: VOL 16, NO 2, 471-471

URI: https://pubs.kist.re.kr/handle/201004/19127

Appears in Collections:: KIST Publication > Conference Paper

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