Characterization of the nitrided GaAs thin layers after rapid thermal annealing by using raman scattering.

Title
Characterization of the nitrided GaAs thin layers after rapid thermal annealing by using raman scattering.
Authors
고의관박용주김은규조성호
Keywords
Nitridation
Issue Date
1998-01
Publisher
Digest of Papers Microprocesses and Nanotechnology '98 : 1998 International Microprocesses and Nanot
Citation
, 210-211
URI
https://pubs.kist.re.kr/handle/201004/19170
Appears in Collections:
KIST Publication > Conference Paper
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