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Dependence of dielectric-cap quantum-well disordering of GaAs-AlGaAs quantum-well structure on the hydrogen content in SiN//x capping layer

Title: Dependence of dielectric-cap quantum-well disordering of GaAs-AlGaAs quantum-well structure on the hydrogen content in SiN//x capping layer

Authors: 최원준; 한상민; S. I. Shah; S. G. Choi; 우덕하; 이석; 김선호; 이정일; 강광남; 조재원

Keywords: Hydrogrn content in capping layer

Issue Date: 1998-07

Publisher: IEEE journal on selected topics in quantum electronics

Citation: VOL 4, NO 4, 624-628

URI: https://pubs.kist.re.kr/handle/201004/22661

ISSN: 1077-260X

Appears in Collections:: KIST Publication > Article

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