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MOCVD growth of AlN, GaN/Si using an N-atom source based on a dielect barrier discharge method

Title
MOCVD growth of AlN, GaN/Si using an N-atom source based on a dielect barrier discharge method
Authors
김진상; 금동화; 이지화
Keywords
MOCVD
Issue Date
1998-09
Publisher
Proc. 2nd Intern. Symp. on blue laser and light emitting diodes, Chiba, Japan, Sept. 29-Oct. 2, 1998
Citation
, 476-479
URI
https://pubs.kist.re.kr/handle/201004/22671
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KIST Publication > Conference Paper
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