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Dependence of damage and strain on the temperature of Si irradiation in epitaxial Geㅊ.10Si0.90 films on Si(100)

Title: Dependence of damage and strain on the temperature of Si irradiation in epitaxial Geㅊ.10Si0.90 films on Si(100)

Authors: D.Y.C. Lie; 송종한; A. Vantomme; F. Eisen; M.-A. Nicolet; N.D. Theodore; T. K. Carns; K.L. Wang

Issue Date: 1995-03

Publisher: Journal of Applied Physics

Citation: VOL 77, NO 6, 2329-2338

URI: https://pubs.kist.re.kr/handle/201004/24610

ISSN: 0021-8979

Appears in Collections:: KIST Publication > Article

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