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Structural optical properties of InAs/GaAs quantum dots grown by atomic layer MBE and its application to 1.13 um laser diodes

Title: Structural optical properties of InAs/GaAs quantum dots grown by atomic layer MBE and its application to 1.13 um laser diodes

Authors: 송진동; 박영민; 신재철; 허두창; 배형철; 임재구; 박용주; 최원준; 한일기; 조운조; 이정일; 김형석; 박찬경

Keywords: InAs; quantum dots; atomic layer epitaxy; laser diodes

Issue Date: 2003-05

Publisher: 제10회 광전자 및 광통신 학술회의

Citation: VOL 10, 511-512

URI: https://pubs.kist.re.kr/handle/201004/25382

Appears in Collections:: KIST Publication > Conference Paper

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