Electrical characterization of InAs/InP self-assembled quantum dots by deep-level transient spectroscopy

Title
Electrical characterization of InAs/InP self-assembled quantum dots by deep-level transient spectroscopy
Authors
E. K. KimJ. S. KimH. HwangK. ParkE. YoonJ. H. KimI. W. Park박용주
Keywords
deep-level transient spectroscopy (DLTS); quantum dot; energy level; capture barrier; InAs; InP
Issue Date
2004-06
Publisher
Japanese Journal of Applied Physics, Part 1
Citation
VOL 43, NO 6B, 3825-3827
URI
https://pubs.kist.re.kr/handle/201004/25560
ISSN
0021-4922
Appears in Collections:
KIST Publication > Article
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