Reduction of the threshold voltage fluctuation in an electrical phase change memory device with a Ge1Sb2Te4/TiN cell structure
- Title
- Reduction of the threshold voltage fluctuation in an electrical phase change memory device with a Ge1Sb2Te4/TiN cell structure
- Keywords
- phase change memory
- Issue Date
- 2004-09
- Publisher
- 2004 International Conference on Solid State Devices and Materials
- Appears in Collections:
- KIST Publication > Conference Paper
- Files in This Item:
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