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dc.contributor.author김지훈-
dc.contributor.author박용주-
dc.contributor.author박영민-
dc.contributor.author송진동-
dc.contributor.author신재철-
dc.contributor.author이정일-
dc.contributor.author김태환-
dc.date.accessioned2015-12-02T08:14:54Z-
dc.date.available2015-12-02T08:14:54Z-
dc.date.issued200310-
dc.identifier.citationVOL 47, NO 4, 273-278-
dc.identifier.other20660-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/27203-
dc.publisher새물리-
dc.subjectEectrical properties-
dc.subjectPhotoluminescence-
dc.subjectMolecular beam epitaxy-
dc.subjectC-V-
dc.subjectCarrier confinement effect-
dc.titleElectron Confinement Effect and Optical Properties of InAs/GaAs Quantum Dots Grown by Using ALE Technique-
dc.typeArticle-
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