Gate-bias dependence of low-frequency noise in poly-Si thin-film transistors
- Gate-bias dependence of low-frequency noise in poly-Si thin-film transistors
- 한일기; 이정일; 이명복; 장수경; 김은규
- polycrystalline-silicon; thin-film transistors; low-frequency noise; number fluctuation; thermal activation; tunneling; barrier height
- Issue Date
- Journal of the Korean Physical Society
- VOL 45, S949-S954
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.