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Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy

Title: Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy

Authors: 김지훈; 박용주; 박영민; 송진동; 이정일; 김태환

Keywords: Epitaxy; Self-assembly; Electrical properties; optical properties; semiconductor

Issue Date: 2007-01

Publisher: Applied surface science

Citation: VOL 253, 3503-3507

URI: https://pubs.kist.re.kr/handle/201004/32436

ISSN: 0169-4332

Appears in Collections:: KIST Publication > Article

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