Growth of low density InGaAs quantum dots using MEMBE

Abstract

Recently communication methods utilizing the quantum nature of photons have been suggested for enhancing security. For the realization of optical communication using quantum cryptography, the single photon sources are essential [1]. Trapped single atoms or ions, single molecules, and single semiconductor quantum dots (QDs) have been researched for the single photon sources. Nowadays, the single photon emission from nano-structure cavity containing single QD has been reported [2]. The InGaAs QDs embedded in GaAs layer can emit the light used in the optical fiber communication. Therefore, the single photon sources using InGaAs QDs have compatibility to the technology in use.