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dc.contributor.author정유진-
dc.contributor.author조경철-
dc.contributor.author이상렬-
dc.date.accessioned2015-12-02T15:21:34Z-
dc.date.available2015-12-02T15:21:34Z-
dc.date.issued200912-
dc.identifier.other31947-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/37089-
dc.description.abstractThin-film transistors (TFTs) were fabricated using amorphous indium gallium zinc oxide (a-IGZO) channels by rf-magnetron sputtering at room temperature. We have investigated the effect of oxygen partial pressure on the transfer characteristics of a-IGZO TFTs. The transfer characteristics of the a-IGZO channel layer were significantly changed by the oxygen partial pressure. Measurements performed on an а-IGZO transistor indicate the change ofthreshold voltage (Vth) in the transistor channel layer and electrical properties asvarying O2 ratio.We have observed and analyzed that the device performance is significantly affected by adjusting O2 ratio, which is closely related withthe generation of modulation by reducing the localized trapping carriers and defect centersat the interface orin the channel layer.-
dc.publisherICAMD 2009-
dc.titleEffect of oxygen on the transfer characteristics of a-IGZO TFT-
dc.typeConference Paper-
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