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dc.contributor.author조경철-
dc.contributor.author정유진-
dc.contributor.author전윤수-
dc.contributor.author주병권-
dc.contributor.author이상렬-
dc.date.accessioned2015-12-02T15:31:15Z-
dc.date.available2015-12-02T15:31:15Z-
dc.date.issued201008-
dc.identifier.citation, 165-165-
dc.identifier.other32771-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/37832-
dc.description.abstractIn summary, we have investigated and analyzed anomalous behaviors of a-IGZO TFTs with HfO2. In the case of a-IGZO TFT with HfO2, mobility, threshold voltage, subthreshold swing, on-to-off ratio and hysteresis width are measured to be about 115 cm2/Vs, 0 V, 0.80 V/decade, 6.71ⅹ104 and 1 V, respectively. This device shows abnormally high saturation mobility mainly due to Qinduced originated from gate-leakage current. On the other hand, a-IGZO TFTs with AHA gate-insulator showed stabilized characteristics in terms of mobility, threshold voltage, subthreshold swing, on-to-off ratio and hysteresis width of about 27.1 cm2/Vs, 0.2 V, 0.68 V/decade, 2.52ⅹ104 and 0.37 V, respectively. In the case of a-IGZO TFT with AHA gate-insulator, electrons cannot easily move across the gate-insulator due to Al2O3 barrier layer. It is expected that this elegant a-IGZO TFT using AHA gate-insulator with very narrow hysteresis characteristic will be a possible candidate for stable backplane TFT to replace amorphous-Si for future display applications.-
dc.publisherChangchun 2010-
dc.titleEfficient suppression of the anomalous behaviors in a-IGZO TFT with HfO2 sandwiched by Al2O3 layers-
dc.typeConference Paper-
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