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|dc.description.abstract||We have investigated the effects of electrode structures to the performance and stability of a-IGZO TFTs that were deposited by rf-sputtering method. TFT characteristic measurements of top, bottom and dual electrode structures show similar results with Ion/off of 107, but that of ASE electrode structure shows Ion/off of 108. In the case of stability of the TFTs, bias temperature stress (BTS) test has been performed at 60 ℃. The a-IGZO TFTs with top and bottom electrode structure shows poorer stability with positive Vth shift of 4.3 V and negative Vth shift of 5.6 V, respectably, in 6 hrs BTS test. However, the a-IGZO TFTs with ASE electrode structure show less than 1 V shift of Vth. The better electrical properties and enhanced stability of the a-IGZO TFT with ASE electrode structure is due to the reduced electron trapping effect in the interface between the channel layer and substrate, which is came from the ASE electrode structure.||-|
|dc.title||Effects of electrode structures on the electrical properties of amorphous ZnO thin film transistor||-|
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