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dc.contributor.author하승규-
dc.contributor.author조남기-
dc.contributor.author임주영-
dc.contributor.author박성준-
dc.contributor.author송진동-
dc.contributor.author최원준-
dc.contributor.author한일기-
dc.contributor.author이정일-
dc.date.accessioned2015-12-02T15:32:20Z-
dc.date.available2015-12-02T15:32:20Z-
dc.date.issued201008-
dc.identifier.other32851-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/37904-
dc.description.abstractThe low density InGaAs/GaAs Quantum Dot (QD) samples have grown with migration enhanced molecular beam epitaxy (MEMBE) method as a candidate for quantum information processing devices. We have grown samples which have two layers of InGaAs QDs buried in GaAs barriers differing spacer layer (SL) thickness, and a sample with a single layer of QDs for comparison. As a preliminary characterization of these vertically coupled QD samples, low temperature pump power dependent photo-luminescence (PL) measurements were performed so that the effects of vertical coupling of InGaAs QDs according to SL thickness variation were observed and analyzed.-
dc.publisherIEEE NANO 2010-
dc.subjectInGaAs-
dc.subjectquantum dot-
dc.subjectphotoluminescence-
dc.subjectMBE-
dc.subjectlow density-
dc.subjectquantum information-
dc.subjectvertical coupling-
dc.titlePhotoluminescence Characterization of Vertically Coupled Low Density InGaAs Quantum Dots for Quantum Information Processing Devices-
dc.typeConference Paper-
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