Photoluminescence Characterization of Vertically Coupled Low Density InGaAs Quantum Dots for Quantum Information Processing Devices

Abstract

The low density InGaAs/GaAs Quantum Dot (QD) samples have grown with migration enhanced molecular beam epitaxy (MEMBE) method as a candidate for quantum information processing devices. We have grown samples which have two layers of InGaAs QDs buried in GaAs barriers differing spacer layer (SL) thickness, and a sample with a single layer of QDs for comparison. As a preliminary characterization of these vertically coupled QD samples, low temperature pump power dependent photo-luminescence (PL) measurements were performed so that the effects of vertical coupling of InGaAs QDs according to SL thickness variation were observed and analyzed.