Amorphous silicon-indium-zinc oxide semiconductor thin film transistors processed below 150 ℃

Abstract

In summary, the incorporation of Si at a few wt % into the IZO improved the stability and shows higher performance than that of a-GIZO TFT furthermore the maximum process temperature is below 150 °C. All these results could indicate that the defects were formed by Si4+ in IZO system, and the deep levels caused by these defects could hold free carriers. This resulted on the higher bias stability of a-SIZO TFT than that of IZO TFT. On the other hand, Si incorporation suppresses carrier generation as a stabilizer. In the case of low processing temperature including annealing treatment below 150 °C, all these characteristics showed enhanced mobility and bias stability compared with those of other amorphous oxide TFTs reported so far, except the SS value to be improved more.