Calculation of full digital-alloyed 1.3 μm MQWs and their optical, structural and electrical properties

Abstract

Digital-alloys, or short-period superlattices (SPSs), consisting of binary or ternary layers with periods of a few monolayers (MLs) have attracted attentions as a solution for molecularbeam epitaxy (MBE) growth of ternary or quaternary materials of various composition with enhanced band-offset, and without additional source cells and laborious change of cell temperature during growth interruption. With the InGaAlAs digital-alloy MBE growth technique, lattice-matched 1.58 μm multi-quantum well (MQW) laser diodes, broadbandemission (1.3 - 1.9 μm) triple-QW light-emitting diodes, strained 1.3 μm MQW lasers, strained 1.55 μm MQW lasers, 1.55 μm vertical cavity surface emitting lasers, avalanche photodiodes, and fully digital-alloyed 1.3 μm MQWs have been successfully grown.[1,2] In this presentation, optical properties of full digital-alloyed 1.3 μm MQWs will be covered and electrical properties of full digital-alloyed MQW laser diodes will be shown. Finally, the measured data will be compared with band-gap calculation.