Epitaxial Directional Growth of Tin Oxide (101) Nanowires on Titania (101) Substrate
- Epitaxial Directional Growth of Tin Oxide (101) Nanowires on Titania (101) Substrate
- 김원식; 김대홍; 최경진; 박재관; 홍성현
- thermal evaporation; X-ray pole figure; HRTEM; Growth direction; Heteroepitaxy
- Issue Date
- Crystal growth & design
- VOL 10, NO 11, 4746-4751
- Highly aligned single crystal SnO2 (101) nanowires were epitaxially grown on TiO2 (101) substrates by thermal
evaporation via Au-catalyzed vapor-liquid-solid (VLS) growth. The orientation relationship and interface structure between
the nanowires and the substrate were determined by X-ray pole figure and high resolution transmission electron microscopy
(HR-TEM) combined with the focused ion beam (FIB) lift-out technique. Epitaxially grown SnO2 (101) nanowires exhibited
three angular growth directions (, , and ) with different inclination angles to the substrate due to a tetragonal
crystal structure. An atomic stacking model was proposed to describe the angular growth of SnO2 (101) nanowires with Æ101æ
growth directions. The obtained results are expected to provide an understanding of the growth direction of nanowires and
heteroepitaxial relationships between nanowires and substrate to synthesize the well-aligned SnO2 nanowires, which can be
integrated into the electronic devices and lead to enhanced properties in the fields such as Li-ion batteries, dye-sensitized solar
cells, and gas sensors.
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