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dc.contributor.author이상렬-
dc.contributor.author정유진-
dc.contributor.author김승한-
dc.contributor.author전윤수-
dc.date.accessioned2015-12-03T00:35:46Z-
dc.date.available2015-12-03T00:35:46Z-
dc.date.issued201008-
dc.identifier.other34260-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/39169-
dc.description.abstractWe have investigated and compared the effect of the bias temperature stress (BTS) on the device instability of indium zinc oxide (IZO) and zinc tin oxide (ZTO) thin film transistors (TFTs) with bottom-gate staggered structure. Positive BTS measurements are performed by applying a drain current stress of 3 µA at VDS = 10 V to the sample for a period of 420 min at 60°C. The magnitude of threshold voltage (Vth) shift increased with the application duration of BTS, to an extent that was much larger in an IZO TFT than in a ZTO TFT. Many previous reports of ZnO-based TFTs have shown that oxygen species absorbed from air can cause a carrier concentration decrease in ZnO-based films and a positive shift in Vth and increase of sub-threshold swing (S.S). These reported phenomena can explain to our measured data after long-term BTS. It is proposed that ZTO TFT shows better stability than IZO TFT due to their relatively lower mobility.-
dc.publisherChangchun 2010-
dc.titleComprehensive study on the bias and temperature induced instability of ZnO based thin film transistors-
dc.typeConference Paper-
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