Characteristics of Cu(In,Ga)Se2 Thin Film Solar Cells Prepared by a Single CIGS Target

Characteristics of Cu(In,Ga)Se2 Thin Film Solar Cells Prepared by a Single CIGS Target
Cu(In,Ga)Se2 thin film; Solar cell; RF magnetron sputtering; Single CIGS target
Issue Date
2011 추계 한국세라믹학회
The Cu(In,Ga)Se2 (CIGS) solar cell has attracted great attention due to its merits such as direct band gap, high absorption coefficient, high conversion efficiency, high radiation resistance, and etc. CIGS thin films have been fabricated using various deposition methods, and the highest conversion efficiency of ~20% could be obtained from CIGS thin films deposited by three-stage co-evaporation method. However, this method is inappropriate to mass production of large area CIGS solar cells. As an alternative method, we tried to utilize the sputtering method because it has been widely used for fabricating large area thin films. In this work, CIGS thin films were deposited on Mo/glass substrates at various substrate temperatures by using rf magnetron sputtering. Employing a single CIGS target, CIGS films could be successfully produced. CIGS grain size was increased with increasing deposition temperatures. CIGS thin films showed a porous microstructure. These CIGS thin films were selenized with Se powder in a tube furnace. We could fabricate CIGS thin films with densely packed morphology. X-ray diffraction patterns revealed that CIGS thin films consisted of chalcopyrite structure. Also, CIGS thin films exhibited p-type conductivity. Al/AZO/i-ZnO/CdS/CIGS/Mo/glass structure was fabricated to measure the conversion efficiency. Detailed results will be presented for a discussion.
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