The relationship between processing parameters and the performance of novel amorphous silicon-indium-zinc oxide thin film transistors

Abstract

The processing parameter dependence of the performance of amorphous silicon-indium-zinc-oxide (a-SIZO) films was systematically investigated for Thin Film Transistors (TFTs). The SIZO thin films were prepared on a SiO2/p-Si substrate using 2 wt% Si-doped IZO (2SIZO) ceramic target through an RFmagnetron sputtering process with various process parameters, such as RF power and oxygen partial pressure. The composition analysis of the target was measured by Induced-Coupled Plasma (ICP) and XRay fluorescence (XRF). The electrical performance of 2SIZO films were relatively changed by the processing parameters. The electrical performance of the 2SIZO-TFTs confirmed that mFE decreaseswith an increasing oxygen partial pressure and decreasing RF-power.