An electrical switching device controlled by a magnetic field-dependent impact ionization process
- An electrical switching device controlled by a magnetic field-dependent impact ionization process
- 이진서; 주성중; 김태엽; 김기현; 이긍원; 홍진기; 신경호
- Issue Date
- Applied physics letters
- VOL 97, NO 25, 253505-1-253505-3
- An abrupt change of conductance at a threshold magnetic field was observed in a device consisting
of a nonmagnetic narrow-gap semiconductor. The conductance varies more than 25 times as the
magnetic field increases. The threshold magnetic field can be tuned using a bias voltage from zero
to several hundred Gauss. This large magnetoconductance effect is caused by the magnetic
field-dependent impact ionization process. A theoretical model is proposed, and calculations based
on this model simulate the experimental results closely. This device may be a good candidate for an
electrical switching device controlled by a magnetic field.
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.