Fabrication of MoS2 Film-based Transistors with Graphene Electrodes

Abstract

Recently, researchs on two-dimensional materials have gathered much attention compared to one dimensional materials since it requires relatively simple fabrication process for generating complex structures. Graphene is the most widely studied two dimensional materials, credited to having exceptional physical properties and mechanical strength including exhibition of high electron conductivity. However, lack of a band gap in pristine graphene is one of the major limitations for the use in devices such as transistors. MoS2 single layers are reported to display large intrinsic band gap and therefore may be a better candidate than graphene for the use as an active material for fabrication of transistor devices. In this study, we propose fabrication of MoS2 film-based transistors with graphene electrodes. Mechanically exfoliated MoS2 films were prepared and deposited on the SiO2 substrate and graphene electrodes were patterned by photolithography. Atomic force microscopy and Raman spectroscopy were used to define single and multi-layers of MoS2 and photoluminescence was performed to confirm the existence of a band gap for monolayer MoS2. The transistor characteristics of the fabricated device were investigated.