Characteristics of Strain-Induced InxGa1-xAs Nanowires Grown on Si(111) Substrates
- Characteristics of Strain-Induced InxGa1-xAs Nanowires Grown on Si(111) Substrates
- 신재철; 최경진; 김도양; 최원준; Li, Xiuling
- Issue Date
- Crystal growth & design
- VOL 12, 2994-2998
- Large strain-energy arising from lattice mismatch
allows one-dimensional heteroepitaxial growth of
InxGa1−xAs on silicon substrates without any catalyst or
pattern assistance. In this paper, we show that in contrast to
nanowires (NWs) grown by metal-catalyzed vapor−liquid−
solid mechanism, strain-induced InxGa1−xAs NWs have several
unique morphological features including no tapering, slight
bending, and composition-dependent NW height saturation.
Although small fluctuation exists, no systematic composition
variations are observed over the entire InxGa1−xAs NW length
within the resolution of the energy-dispersive X-ray spectroscopy analysis.
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