Effect of Hybrid Annealing with Sulfur and Selenium on Electrodeposited CuInSe2 Film

Abstract

Annealing is an important process for inducing the crystallization and grain growth of CuInSe2 prepared by non-vacuum processes. This study focuses on the effect of hybrid annealing of electrodeposited CuInSe2 films under the atmosphere of sulfur and selenium. Thin CuInSe2 films, which were electrodeposited on Mo-coated glass substrates and had 1.5~2.0 μm thickness with uniform composition, were annealed at around 550oC to produce dense large-grain CuInSe2 (or CuInSe2-xSx) in the flow of Se/Ar, H2S/Ar, or H2S/Se/Ar. The annealed film was chemically etched in KCN solution, producing a flat In-rich CuInSe2 (or CuInSe2-xSx) film with less secondary phases. Effects of hybride annealing on structural and morphological changes in the CuInSe2 films as well as on photoelectochemical properties of the CuInSe2 solar cell devices were examined.