Near edge X-ray absorption fine structure study of Zn0.8Mg0.2O thin films

Abstract

We report the local electronic structure study of Zn0.8Mg0.2O thin films using x-ray absorption spectroscopy. The films were deposited on p-Si (100) substrates by sol-gel method and then annealed in O2 ambient for 1 hour. X-ray diffraction (XRD) confirmed the single phase wurtzite structure with a (002) preferred orientation. The near edge x-ray absorption fine structure (NEXAFS) spectrum collected at O K–edge indicates the presence of some oxygen vacancies in the film. The NEXAFS at Mg K-edge confirms the Mg doping into ZnO lattice. Zn L3-edge spectra feature reflects no Zn defect related features.