Properties of N-doped ZnO grown by DBD-PLD
- Properties of N-doped ZnO grown by DBD-PLD
- 임재현; 이득희; 이상렬
- ZnO; DBD-PLD; photoluminescence; N-doping
- Issue Date
- Thin solid films
- VOL 518, NO 4, 1238-1240
- N-doped ZnO thin films have been grown on sapphire substrates by
dielectric barrier discharged pulsed laser deposition (DBD-PLD). Low temperature
photoluminescence spectra of N-doped ZnO film verified the p-type doping status to
find the acceptor-bound exciton peaks with the high resolution detection. At low
temperature growth, the major defects in the N-doped ZnO film were the oxygen
interstitials that can combine with N, so that the N played the role as an acceptor. On
the other hand, the major defects in the samples processed at high temperature were
oxygen vacancies with which N doesn’t play the role as an acceptor. The acceptor
binding energy of N acceptor was estimated to be about 105 meV.
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