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dc.contributor.author정유진-
dc.contributor.author전용우-
dc.contributor.author전윤수-
dc.contributor.author김대환-
dc.contributor.author이상렬-
dc.date.accessioned2015-12-03T00:59:58Z-
dc.date.available2015-12-03T00:59:58Z-
dc.date.issued201101-
dc.identifier.citationVOL 32, NO 1, 39-41-
dc.identifier.issn0741-3106-
dc.identifier.other33867-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/45598-
dc.description.abstractThe top-source noncoplanar diagonal electrode (TS-NDE) structure was fabricated and simulated with the oxide channel layer. The structure exhibits enhanced stability and low subthreshold swing with higher mobility than those of bottom– source electrode structure thin-film transistors (TFTs). Interest ingly, in this highly stable TS-NDE, the current density was highly formed through the center of the active-channel region from top– source electrode to bottom-drain electrode in the thin-film layer due to the on-current state. In other words, the TS-NDE TFT is less affected by back-interface interferences, which are the main degradation factors in oxide TFTs due to the different current path.-
dc.publisherIEEE Electron Device Letters-
dc.subjectthin-film transistors (TFTs)-
dc.subjectElectronic mechanisms-
dc.subjectsemiconductors-
dc.titleDesign of Noncoplanar Diagonal Electrode Structure for Oxide Thin-film Transistor-
dc.typeArticle-
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