Nanosecond switching in GeSe phase change memory films by atomic force microscopy

Abstract

In summary, the threshold switching dynamics of a GeSe chalcogenide phase change material have been characterized using conducting AFM, implementing pulse durations as short as 15 ns. Current ratio maps of the switched bits uniquely identify an increase in the crystalline phase volume with increasing pulse durations. The bit size is independent of pulse amplitude. Finally, statistical and spatial variations in the results correlate with variations in the conductivity of the initial amorphous film, demonstrating the particular value of AFM-based studies of such resistive switching processes which are sensitive to variations in the energy landscape at the nanoscale.