Nanosecond switching in GeSe phase change memory films by atomic force microscopy

Title
Nanosecond switching in GeSe phase change memory films by atomic force microscopy
Authors
James L. BosseIlya GrishinYong Gyu Choi정병기이수연Oleg. V. KolosovBryan D. Huey
Keywords
GeSe; nanosecond switching; phase change memory; atomic force microscopy
Issue Date
2014-02
Publisher
Applied physics letters
Citation
VOL 104, NO 5, 053109-1-053109-4
Abstract
In summary, the threshold switching dynamics of a GeSe chalcogenide phase change material have been characterized using conducting AFM, implementing pulse durations as short as 15 ns. Current ratio maps of the switched bits uniquely identify an increase in the crystalline phase volume with increasing pulse durations. The bit size is independent of pulse amplitude. Finally, statistical and spatial variations in the results correlate with variations in the conductivity of the initial amorphous film, demonstrating the particular value of AFM-based studies of such resistive switching processes which are sensitive to variations in the energy landscape at the nanoscale.
URI
https://pubs.kist.re.kr/handle/201004/47917
ISSN
00036951
Appears in Collections:
KIST Publication > Article
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