Atomically Thin Carbon Nanosheets Akin to Graphene Properties Derived from Carbon Fiber Process

Atomically Thin Carbon Nanosheets Akin to Graphene Properties Derived from Carbon Fiber Process
Graphene; Carbon nanosheet; carbon fiber; OPV; OTFT; electrode
Issue Date
Carbon 2014
Graphene, a one-atom-thick allotrope of carbon with two-dimensional structure, has received much attention since the reporting of its distinctive properties. Widely recognized chemical vapor deposition (CVD) of graphene synthesis has serious drawbacks such as wrinkles, grain boundaries, and defects because of catalyst removal and transfer process. Therefore, in order to eliminate the additional processes, catalyst-free CVD using sapphire and hexagonal boron nitride substrates, which is stable at high temperature above 1400 ℃, have been reported. However, the substrates were unaffordable and limited in electronic device applications. In this study, atomically thin carbon nanosheets (CNSs) similar to graphene properties were directly synthesized on silicon wafer or quartz with no artificial defects via carbon fiber processes. Polymer precursors for carbon fiber production were spin-coated onto the substrates. The polymer film was successfully converted into the CNS by heat treatment. The thickness of the CNS can be easily controlled by changing the concentration of the precursor. The electrical and morphological properties of the CNSs depend on the structure of the precursors. The CNS on a silicon wafer showed higher electrical conductivity than that of chemically converted graphene. In addition, mobility of the CNS as the electrode of a thin film transistor was superior to that of gold electrodes or graphene electrodes grown using metal catalyst.
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