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dc.contributor.author황도경-
dc.contributor.author유태희-
dc.contributor.author상병인-
dc.date.accessioned2016-05-24T08:25:31Z-
dc.date.available2016-05-24T08:25:31Z-
dc.date.issued2016-02-
dc.identifier.citationVOL 68, NO 4, 599-603-
dc.identifier.issn03744884-
dc.identifier.other46289-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/59136-
dc.description.abstractAmorphous InGaZnO (IGZO) is a promising semiconducting material to replace amorphous and polycrystalline Si. IGZO-based field-effect transistors (FET) can be versatile platforms for various electronic or optoelectronic applications. Here, we report on a one-dimensional (1-D) IGZO FET fabricated on a flexible polyimide wire substrate for electronic textiles (e-textiles). This flexible 1-D IGZO FET shows a high mobility of 18.18 cm2/Vs with a relatively good on/off current ratio of 104 at operating voltages below 5 V. Furthermore, a resistive-load inverter is implemented by connecting the 1-D IGZO FET to an external load resistor. Such an inverter exhibits obvious voltage switching characteristics, verifying the potential it is being a basic building block for an e-textile circuit system.-
dc.publisherJournal of the Korean Physical Society-
dc.subjectInGaZnO-
dc.subject1-D Field-effect Transistor-
dc.subjectElectronic Textile-
dc.titleOne-dimensional InGaZnO Field-effect Transistor on a Polyimide Wire Substrate for an Electronic Textile-
dc.typeArticle-
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