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dc.contributor.author정병기-
dc.contributor.authorYong Gyu Choi-
dc.contributor.authorSang Yeol Shin-
dc.contributor.authorRoman Golovchak-
dc.contributor.authorHimanshu Jain-
dc.date.accessioned2016-07-30T15:30:06Z-
dc.date.available2016-07-30T15:30:06Z-
dc.date.issued2016-06-
dc.identifier.citationVOL 686, 273-
dc.identifier.issn09258388-
dc.identifier.other46944-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/59704-
dc.publisherJournal of alloys and compounds-
dc.subjectamorphous chalcogenide film-
dc.subjectEXAFS analysis-
dc.subjectElectrical properties-
dc.subjectphase change material-
dc.subjectthreshold switching device-
dc.titleComparative study of atomic arrangements in equiatomic GeSe and GeTe films before and after crystallization-
dc.typeArticle-
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