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Epitaxial growth of strained germanium using InxAl1-xAs buffer layer

Title: Epitaxial growth of strained germanium using InxAl1-xAs buffer layer

Authors: 김형준; 김상현; 주건우; 김한성; 심재필; 김성광; 임희정

Keywords: Strain; Germanium; stressor layer; InAlAs

Issue Date: 2017-02

Publisher: 한국반도체학술대회

URI: https://pubs.kist.re.kr/handle/201004/60562

Appears in Collections:: KIST Publication > Conference Paper

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