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Contact­Engineered Electrical Properties of MoS2 Field­Effect Transistors via Selectively Deposited Thiol­Molecules

Title
Contact­Engineered Electrical Properties of MoS2 Field­Effect Transistors via Selectively Deposited Thiol­Molecules
Authors
정승준; 조경준; 박진수; 김재근; 강기훈; 김태영; 신지원; 최유리; 이탁희
Issue Date
2018-03
Publisher
Advanced materials
URI
https://pubs.kist.re.kr/handle/201004/61304
ISSN
09359648
Appears in Collections:
KIST Publication > Article
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